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IRFZ24N中文资料

元器件交易网http://www.hjavira.net

PD - 91354A

IRFZ24N

HEXFET® Power MOSFET

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Advanced Process TechnologyDynamic dv/dt Rating

175°C Operating TemperatureFast Switching

Fully Avalanche Rated

IRFZ24N中文资料

Description

Fifth Generation HEXFET® power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon area. This benefit, combined with the fastswitching speed and ruggedized device design that HEXFETpower MOSFETs are well known for, provides the designerwith an extremely efficient device for use in a wide varietyof applications.

The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermal resistanceand low package cost of the TO-220 contribute to its wideacceptance throughout the industry.

IRFZ24N中文资料

IRFZ24N中文资料

IRFZ24N中文资料

9/13/99

IRFZ24N中文资料

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